Vishay Type N-Channel MOSFET, 25 A, 30 V PowerPAK SO-8 SIRA12DP-T1-GE3
- RS Stock No.:
- 256-7431
- Mfr. Part No.:
- SIRA12DP-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD4.41
(exc. GST)
SGD4.805
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 2,985 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD0.882 | SGD4.41 |
| 50 - 95 | SGD0.856 | SGD4.28 |
| 100 - 245 | SGD0.822 | SGD4.11 |
| 250 - 995 | SGD0.78 | SGD3.90 |
| 1000 + | SGD0.734 | SGD3.67 |
*price indicative
- RS Stock No.:
- 256-7431
- Mfr. Part No.:
- SIRA12DP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.0095Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.0095Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Semiconductor N-channel 30 V 25A (Tc) 4.5W (Ta), 31W (Tc) surface mount iTime is halogen-free according to IEC 61249-2-21 definition and its applications are high power density DC, DC, synchronous rectification, VRMs and embedded DC, DC.
TrenchFET gen IV power mosfet
100 % Rg and UIS tested
Compliant to RoHS directive 2002/95/EC
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