Vishay E N-Channel Power MOSFET, 15 A, 600 V, 3-Pin TO-263 SIHB15N60E-GE3
- RS Stock No.:
- 256-7410
- Mfr. Part No.:
- SIHB15N60E-GE3
- Manufacturer:
- Vishay
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SGD184.80
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SGD201.45
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- Final 950 unit(s), ready to ship from another location
Units | Per unit | Per Tube* | Saving |
|---|---|---|---|
| 50 - 50 | SGD3.696 | SGD184.80 | - |
| 100 - 450 | SGD3.676 | SGD183.80 | SGD2.00 |
| 500 - 950 | SGD3.573 | SGD178.65 | SGD61.50 |
| 1000 - 1950 | SGD3.375 | SGD168.75 | SGD321.00 |
| 2000 + | SGD3.00 | SGD150.00 | SGD1,392.00 |
*price indicative
- RS Stock No.:
- 256-7410
- Mfr. Part No.:
- SIHB15N60E-GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | E | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.28Ω | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 180W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series E | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.28Ω | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 180W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 600V Maximum Drain Source Voltage, 15A Maximum Continuous Drain Current - SIHB15N60E-GE3
Features and Benefits:
• 15A continuous drain current supports substantial load currents
• Rds(on) 0.28Ω minimises conduction losses under load
• 180W power dissipation handles elevated thermal stress
• Gate charge 78nC at 30V Vgs allows predictable drive requirements
• TO‑263 surface package simplifies PCB assembly for power stages
Applications
• Ideal for motor-drive front-end switching stages
• Used for lighting ballast and industrial controls
• Can be used for power conversion in renewable inverters
• Used with thermal-management boards for high-power modules
What gate-drive voltage range should be observed?
How does the thermal environment affect reliability?
What package considerations are there for PCB design?
Is this suitable for automotive powertrain applications?
Related links
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- Vishay E N-Channel Power MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB150N60E-GE3
- Vishay E N-Channel Power MOSFET 650 V, 3-Pin TO-263 SIHB24N65E-GE3
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- Vishay E N-Channel Power MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB15N80AE-GE3
- Vishay E N-Channel Power MOSFET 600 V Enhancement, 8-Pin PowerPAK
