Vishay Type N-Channel MOSFET, 10 A, 400 V, 3-Pin TO-263
- RS Stock No.:
- 256-7276
- Mfr. Part No.:
- IRF740ASPBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionSubtotal (1 tube of 50 units)*
SGD102.60
(exc. GST)
SGD111.85
(inc. GST)
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | SGD2.052 | SGD102.60 |
| 100 - 450 | SGD2.04 | SGD102.00 |
| 500 - 950 | SGD1.984 | SGD99.20 |
| 1000 - 1950 | SGD1.874 | SGD93.70 |
| 2000 + | SGD1.665 | SGD83.25 |
*price indicative
- RS Stock No.:
- 256-7276
- Mfr. Part No.:
- IRF740ASPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Automotive Standard No | ||
The Vishay Semiconductor power mosfet its low gate charge Qg results in cimple drive requirement and its applications are switch mode power supply (SMPS),
uninterruptible power supply and high speed power switching.
Fully characterized capacitance and avalanche
Effective coss specified
Improved gate, avalanche, and dynamic dV/dt
Ruggedness
Related links
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