Vishay IRF740AS N-Channel Power MOSFET, 10 A, 400 V, 3-Pin TO-263 IRF740ASPBF
- RS Stock No.:
- 256-7276
- Mfr. Part No.:
- IRF740ASPBF
- Manufacturer:
- Vishay
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SGD116.00
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SGD126.50
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Units | Per unit | Per Tube* | Saving |
|---|---|---|---|
| 50 - 50 | SGD2.32 | SGD116.00 | - |
| 100 - 450 | SGD2.307 | SGD115.35 | - |
| 500 - 950 | SGD2.243 | SGD112.15 | 3% |
| 1000 - 1950 | SGD2.118 | SGD105.90 | 8% |
| 2000 + | SGD1.883 | SGD94.15 | 18% |
*price indicative
- RS Stock No.:
- 256-7276
- Mfr. Part No.:
- IRF740ASPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-263 | |
| Series | IRF740AS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.55Ω | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-263 | ||
Series IRF740AS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.55Ω | ||
Maximum Gate Source Voltage Vgs 10V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Height 4.83mm | ||
Automotive Standard No | ||
Vishay IRF740AS Series Power MOSFET, 400V Drain Source Voltage, 125W Power Dissipation - IRF740ASPBF
This power MOSFET is a high-voltage, N-channel switching device designed for surface-mount power applications. It is intended for use where robust switching of high drain voltages is required and operates across a wide temperature range for demanding thermal environments.
Features and Benefits:
• 400V drain rating enables high-voltage switching applications
• 10A continuous drain current supports substantial load currents
• 0.55Ω Rds(on) reduces conduction losses in switching stages
• 125W power dissipation allows significant thermal throughput
• 36nC typical gate charge facilitates controlled switching transitions
• 10V gate tolerance suits common drive-voltage architectures
• 10A continuous drain current supports substantial load currents
• 0.55Ω Rds(on) reduces conduction losses in switching stages
• 125W power dissipation allows significant thermal throughput
• 36nC typical gate charge facilitates controlled switching transitions
• 10V gate tolerance suits common drive-voltage architectures
Applications
• Suitable for switch-mode power supplies in industrial systems
• Ideal for high-voltage motor-driver front ends
• Used for power conversion in renewable-energy inverters
• Can be used for auxiliary power rails in telecom equipment
• Employed in general-purpose high-voltage switching circuits
• Ideal for high-voltage motor-driver front ends
• Used for power conversion in renewable-energy inverters
• Can be used for auxiliary power rails in telecom equipment
• Employed in general-purpose high-voltage switching circuits
What package type should I anticipate for board layout considerations?
It is supplied in a TO-263 package intended for surface mounting, permitting heat-sinking via the PCB and allowing for larger current paths.
What ambient temperature extremes can the device withstand during operation?
The transistor is rated to function across an operating temperature span from -55°C up to +150°C, accommodating both low-temperature starts and elevated thermal conditions.
How does gate drive affect switching performance?
With a typical gate charge of 36nC at a 10V gate drive, switching speed and gate-drive current requirements should be balanced to manage transition losses and EMI.
What type of conductivity does the device use for switching?
It employs an N-channel conduction channel, suitable for low-side and high-side arrangements depending on circuit topology.
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