Vishay Type P-Channel MOSFET, 20.5 A, -30 V Enhancement, 8-Pin SO-8 SI4151DY-T1-GE3

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Subtotal (1 pack of 5 units)*

SGD10.93

(exc. GST)

SGD11.915

(inc. GST)

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Units
Per unit
Per Pack*
5 - 45SGD2.186SGD10.93
50 - 95SGD1.968SGD9.84
100 - 245SGD1.77SGD8.85
250 - 995SGD1.594SGD7.97
1000 +SGD1.436SGD7.18

*price indicative

Packaging Options:
RS Stock No.:
252-0244
Mfr. Part No.:
SI4151DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

20.5A

Maximum Drain Source Voltage Vds

-30V

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

58nC

Maximum Power Dissipation Pd

5.6W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the gate terminal is lower than the source voltage.

TrenchFET power MOSFET

100 % Rg and UIS tested

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