Vishay Type P-Channel MOSFET, 65.7 A, 60 V Enhancement, 8-Pin PowerPAK SO-8 SIR1309DP-T1-GE3

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Subtotal (1 pack of 10 units)*

SGD10.26

(exc. GST)

SGD11.18

(inc. GST)

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Units
Per unit
Per Pack*
10 - 40SGD1.026SGD10.26
50 - 90SGD0.923SGD9.23
100 - 240SGD0.832SGD8.32
250 - 990SGD0.749SGD7.49
1000 +SGD0.673SGD6.73

*price indicative

Packaging Options:
RS Stock No.:
252-0271
Mfr. Part No.:
SIR1309DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

65.7A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

54nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

83W

Maximum Operating Temperature

175°C

Width

5.15 mm

Length

6.15mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the gate terminal is lower than the source voltage.

TrenchFET Gen IV p-channel power MOSFET

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