Infineon IPW Type P-Channel MOSFET, 60 A, 40 V Enhancement, 3-Pin TO-247 IPW65R060CFD7XKSA1
- RS Stock No.:
- 250-0597
- Mfr. Part No.:
- IPW65R060CFD7XKSA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 30 units)*
SGD227.76
(exc. GST)
SGD248.25
(inc. GST)
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In Stock
- Plus 90 unit(s) shipping from 26 October 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | SGD7.592 | SGD227.76 |
| 60 - 60 | SGD7.46 | SGD223.80 |
| 90 - 150 | SGD7.266 | SGD217.98 |
| 180 - 330 | SGD6.887 | SGD206.61 |
| 360 + | SGD6.168 | SGD185.04 |
*price indicative
- RS Stock No.:
- 250-0597
- Mfr. Part No.:
- IPW65R060CFD7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPW | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPW | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 650V CoolMOS CFD7 extends the voltage class offering of the CFD7 family and is a success or to the 650V CoolMOS CFD2. Resulting from improved switching performance and excellent thermal behaviour. It offers highest efficiency in resonant switching topologies, such as LLC and phase-shift-full-bridge(ZVS). As part of Infineon’s fast body diode portfolio, this new product series blends all advantages of a fast switching technology together with superior hard commutation robustness. The technology meets highest efficiency and reliability standards and furthermore supports high power density solutions.
Excellent hard commutation ruggedness
Extra safety margin for designs with increased bus voltage
Outstanding light load efficiency in industrial SMPS applications
Improved full load efficiency in industrial SMPS applications
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