Infineon BSR Type N-Channel MOSFET, 3.7 A, 40 V Enhancement, 3-Pin SOT-223 BSR802NL6327HTSA1

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Subtotal (1 pack of 5 units)*

SGD3.19

(exc. GST)

SGD3.475

(inc. GST)

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Per unit
Per Pack*
5 - 5SGD0.638SGD3.19
10 - 95SGD0.576SGD2.88
100 - 245SGD0.518SGD2.59
250 - 495SGD0.464SGD2.32
500 +SGD0.42SGD2.10

*price indicative

Packaging Options:
RS Stock No.:
250-0540
Mfr. Part No.:
BSR802NL6327HTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.7A

Maximum Drain Source Voltage Vds

40V

Series

BSR

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Distrelec Product Id

304-40-497

Automotive Standard

AEC-Q101

The Infineon makes this Optimos 2 Small-Signal-Transistor. It is a P-channel, Enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free.

Logic level (4.5V rated)

Avalanche rated and 100% lead-free

Maximum power dissipation is 360 mW

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