DiodesZetex ZXMP10A18G Type P-Channel MOSFET, 3.7 A, 100 V Enhancement, 4-Pin SOT-223
- RS Stock No.:
- 922-8020
- Mfr. Part No.:
- ZXMP10A18GTA
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 1000 units)*
SGD1,483.00
(exc. GST)
SGD1,616.00
(inc. GST)
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In Stock
- 22,000 unit(s) ready to ship from another location
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Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | SGD1.483 | SGD1,483.00 |
| 2000 - 3000 | SGD1.439 | SGD1,439.00 |
| 4000 - 9000 | SGD1.396 | SGD1,396.00 |
| 10000 + | SGD1.354 | SGD1,354.00 |
*price indicative
- RS Stock No.:
- 922-8020
- Mfr. Part No.:
- ZXMP10A18GTA
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3.7A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ZXMP10A18G | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.9W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -0.95V | |
| Typical Gate Charge Qg @ Vgs | 26.9nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Width | 3.7 mm | |
| Height | 1.7mm | |
| Automotive Standard | AEC-Q104, AEC-Q200, AEC-Q101, AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3.7A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ZXMP10A18G | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.9W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -0.95V | ||
Typical Gate Charge Qg @ Vgs 26.9nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Width 3.7 mm | ||
Height 1.7mm | ||
Automotive Standard AEC-Q104, AEC-Q200, AEC-Q101, AEC-Q100 | ||
- COO (Country of Origin):
- DE
P-Channel MOSFET, 100V to 450V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
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