Infineon BSP N-Channel MOSFET, 120 mA, 600 V Enhancement, 3-Pin SOT-223 BSP125H6433XTMA1
- RS Stock No.:
- 250-0527
- Mfr. Part No.:
- BSP125H6433XTMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (1 reel of 4000 units)*
SGD1,756.00
(exc. GST)
SGD1,916.00
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
- Shipping from 22 February 2027
Units | Per unit | Per Reel* |
|---|---|---|
| 4000 - 4000 | SGD0.439 | SGD1,756.00 |
| 8000 - 8000 | SGD0.395 | SGD1,580.00 |
| 12000 + | SGD0.356 | SGD1,424.00 |
*price indicative
- RS Stock No.:
- 250-0527
- Mfr. Part No.:
- BSP125H6433XTMA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | BSP | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45000mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series BSP | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45000mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon BSP Series MOSFET, 600V Maximum Drain-Source Voltage, 81W Maximum Power Dissipation - BSP125H6433XTMA1
Features and Benefits:
• 81W power dissipation supports sustained thermal loads
• 0.12A continuous drain current suits low-current control paths
• 45,000mΩ on-resistance minimises conduction losses
• 80nC gate charge at 20V simplifies gate-drive design
Applications
• Ideal for automotive control circuits requiring qualification
• Used with Compact converters needing SOT-223 mounting
• Can be used for high-temperature electronic modules
• Suitable for surface-mount prototype and production boards
What gate voltage limits must be observed?
What thermal range can be expected during operation?
How many pins and what package type should PCB designers allow for?
What standards or approvals apply to this component?
Related links
- Infineon BSP N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-223 BSP125H6433XTMA1
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- Infineon SIPMOS N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223
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- Infineon SIPMOS N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223 BSP135H6327XTSA1
- STMicroelectronics SuperMESH N-Channel MOSFET 600 V Enhancement, 4-Pin SOT-223 STN1NK60Z
