Infineon IAUZ N-Channel MOSFET, 40 A, 60 V Enhancement, 8-Pin PQFN IAUZ40N06S5N050ATMA1
- RS Stock No.:
- 249-6899
- Mfr. Part No.:
- IAUZ40N06S5N050ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 5000 units)*
SGD3,640.00
(exc. GST)
SGD3,970.00
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 07 June 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | SGD0.728 | SGD3,640.00 |
| 10000 - 10000 | SGD0.703 | SGD3,515.00 |
| 15000 + | SGD0.678 | SGD3,390.00 |
*price indicative
- RS Stock No.:
- 249-6899
- Mfr. Part No.:
- IAUZ40N06S5N050ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PQFN | |
| Series | IAUZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PQFN | ||
Series IAUZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IAUZ Series MOSFET, 60V Maximum Drain-Source Voltage, 40A Maximum Continuous Drain Current - IAUZ40N06S5N050ATMA1
This MOSFET is an N-channel enhancement device designed for high-current switching in surface-mount applications. It operates across a wide temperature range and is suitable where Compact power handling and rugged thermal tolerance are required. The device conforms to environmental restrictions and is supplied in a heat-efficient PQFN package optimised for automated placement.
Features and Benefits:
• 5mΩ Rds(on) enables reduced conduction losses
• 60V Vds supports medium-voltage power stages
• 40A continuous current handles high-load switching
• 81W power dissipation allows sustained thermal loading
• 80 nC typical gate charge facilitates predictable drive requirements
• 60V Vds supports medium-voltage power stages
• 40A continuous current handles high-load switching
• 81W power dissipation allows sustained thermal loading
• 80 nC typical gate charge facilitates predictable drive requirements
Applications
• Suitable for automotive power distribution modules
• Ideal for DC-DC converter output stages
• Used with motor drive half-bridges in Compact systems
• Can be used for synchronous rectification in power supplies
• Used for industrial switching across wide temperatures
• Ideal for DC-DC converter output stages
• Used with motor drive half-bridges in Compact systems
• Can be used for synchronous rectification in power supplies
• Used for industrial switching across wide temperatures
What gate drive considerations are needed for this device?
A gate drive capable of delivering approximately 80 nC at the chosen Vgs level will ensure reliable switching timings and predictable transition losses.
How does the thermal environment affect continuous current capability?
The 81W dissipation rating requires adequate PCB thermal management and thermal vias to sustain high continuous currents without exceeding junction temperature limits.
What voltage and polarity constraints apply to the gate?
The gate must not be driven beyond ±20V relative to the source to avoid damage to the gate oxide.
What temperature range can it tolerate in industrial settings?
It is specified to operate from -55°C up to 175°C, enabling use in harsh and high-temperature environments.
Related links
- Infineon IAUZ N-Channel MOSFET 60 V Enhancement, 8-Pin PQFN IAUZ40N06S5N050ATMA1
- Infineon IAUZ N-Channel MOSFET 60 V Enhancement, 8-Pin PQFN IAUZ30N06S5L140ATMA1
- Infineon IAUZ N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUZ30N10S5L240ATMA1
- Infineon IAUZ N-Channel MOSFET 1200 V Enhancement, 8-Pin AG-EASY2B F3L8MR12W2M1HPB11BPSA1
- Infineon IAUZ N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUZ20N08S5L300ATMA1
- Infineon IPZ N-Channel MOSFET 40 V Enhancement, 8-Pin PQFN
- Infineon OptiMOS N-Channel MOSFET 100 V Enhancement, 8-Pin PQFN
- Infineon IPZ N-Channel MOSFET 40 V Enhancement, 8-Pin PQFN IPZ40N04S55R4ATMA1