Infineon IPN Type N-Channel MOSFET, 100 A, 650 V, 3-Pin SOT-223

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Bulk discount available

Subtotal (1 reel of 3000 units)*

SGD1,815.00

(exc. GST)

SGD1,977.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 3000SGD0.605SGD1,815.00
6000 - 6000SGD0.545SGD1,635.00
9000 +SGD0.49SGD1,470.00

*price indicative

RS Stock No.:
244-2268
Mfr. Part No.:
IPN60R360PFD7SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

650V

Series

IPN

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R360PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPN60R360PFD7S in a SOT-223 package features RDS(on) of 360mOhm resulting in low switching losses.

Very low FOM RDS(on) x Eoss

Integrated robust fast body diode

Up to 2kV ESD protection

Wide range of RDS(on) values

Excellent commutation ruggedness

Low EMI

Broad package portfolio

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