Infineon iPB Type P-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB110P06LMATMA1
- RS Stock No.:
- 243-9267
- Mfr. Part No.:
- IPB110P06LMATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Add 2000 more to save SGD180.00
View bulk pricing optionsSubtotal (1 reel of 1000 units)*
SGD3,023.00
(exc. GST)
SGD3,295.00
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
- Shipping from 18 January 2027
Units | Per unit | Per Reel* | Saving |
|---|---|---|---|
| 1000 - 1000 | SGD3.023 | SGD3,023.00 | - |
| 2000 - 2000 | SGD2.933 | SGD2,933.00 | SGD180.00 |
| 3000 + | SGD2.845 | SGD2,845.00 | SGD534.00 |
*price indicative
- RS Stock No.:
- 243-9267
- Mfr. Part No.:
- IPB110P06LMATMA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 273A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 273A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon iPB Series MOSFET, 100V Maximum Drain Source Voltage, 273A Maximum Continuous Drain Current - IPB110P06LMATMA1
Features and Benefits:
• High continuous drain current supports heavy load handling
• 100V drain-source rating allows higher-voltage deployment
• 81W power dissipation provides robust thermal capacity
• 80nC typical gate charge permits responsive switching
• RoHS conformity minimises hazardous substance content
Applications
• Useful in motor-drive downstream stages requiring high current
• Can be used for high-voltage DC-DC converter switches
• Ideal for Compact surface-mount power modules
• Used for fast switching in transient load environments
What gate voltage limits must be observed during use?
How does temperature range affect deployment options?
What mounting considerations apply for thermal performance?
How does channel type influence circuit polarity?
What switching behaviour is indicated by its forward voltage?
Related links
- Infineon iPB Type P-Channel MOSFET 100 V N, 3-Pin TO-263 IPB110P06LMATMA1
- Infineon iPB Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IPB80P03P4L04ATMA2
- Infineon iPB Type P-Channel MOSFET 100 V N, 3-Pin TO-263 IPB320P10LMATMA1
- Infineon iPB Type P-Channel MOSFET 100 V N, 3-Pin TO-263 IPB330P10NMATMA1
- Infineon iPB Type P-Channel MOSFET 100 V N, 3-Pin TO-263 IPB19DP10NMATMA1
- Infineon iPB Type P-Channel MOSFET 150 V N, 3-Pin TO-263 IPB720P15LMATMA1
- Infineon iPB N-Channel MOSFET 100 V N, 3-Pin TO-263
- Infineon iPB N-Channel MOSFET 100 V N, 3-Pin TO-263 IPB048N15N5ATMA1
