Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE006NE2LM5ATMA1

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Subtotal (1 pack of 2 units)*

SGD3.76

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SGD4.10

(inc. GST)

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Per unit
Per Pack*
2 - 8SGD1.88SGD3.76
10 - 98SGD1.84SGD3.68
100 - 248SGD1.795SGD3.59
250 - 498SGD1.755SGD3.51
500 +SGD1.71SGD3.42

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Packaging Options:
RS Stock No.:
242-0305
Mfr. Part No.:
IQE006NE2LM5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

253A

Maximum Drain Source Voltage Vds

30V

Package Type

PQFN

Series

IQE

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.2mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Forward Voltage Vf

0.73V

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

AEC-Q101

The Infineon OptiMOS 5 power transistor is a N channel MOSFET which has very low on resistance. It is fully qualified according to JEDEC for Industrial Applications.

100% avalanche tested

Superior thermal resistance

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