Infineon BSG0810NDI 2 Type N-Channel MOSFET, 50 A, 25 V, 8-Pin TISON-8 BSG0810NDIATMA1

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Subtotal (1 pack of 2 units)*

SGD7.17

(exc. GST)

SGD7.816

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8SGD3.585SGD7.17
10 - 98SGD3.515SGD7.03
100 - 248SGD3.45SGD6.90
250 - 498SGD3.385SGD6.77
500 +SGD3.315SGD6.63

*price indicative

Packaging Options:
RS Stock No.:
242-0301
Mfr. Part No.:
BSG0810NDIATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

25V

Package Type

TISON-8

Series

BSG0810NDI

Pin Count

8

Maximum Power Dissipation Pd

6.25W

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

8.4nC

Maximum Gate Source Voltage Vgs

±16 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS, IEC61249-2-21, JEDEC1

Number of Elements per Chip

2

Automotive Standard

No

The Infineon Power Block is a dual asymmetric N-channel OptiMOS 5 MOSFET. It is monolithic integrated Schottky like diode.

Halogen-free according to IEC61249-2-21

Pb-free lead plating and RoHS compliant

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