Infineon N Channel Mosfet OptiMOS 2 N-Channel MOSFET, 50 A, 25 V Enhancement, 8-Pin Power Block 5x6 BSG0811NDATMA1

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SGD31.20

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SGD34.00

(inc. GST)

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10 - 10SGD3.12SGD31.20
20 - 90SGD2.858SGD28.58
100 - 240SGD2.64SGD26.40
250 - 490SGD2.452SGD24.52
500 +SGD2.382SGD23.82

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Packaging Options:
RS Stock No.:
215-2467
Mfr. Part No.:
BSG0811NDATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

25V

Series

OptiMOS

Package Type

Power Block 5x6

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

840mV

Maximum Gate Source Voltage Vgs

4.5V

Typical Gate Charge Qg @ Vgs

8.4nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

6.25W

Maximum Operating Temperature

150°C

Transistor Configuration

N Channel Mosfet

Height

1.1mm

Width

6.1mm

Length

5.1mm

Standards/Approvals

JEDEC, RoHS, IEC61249-2-21

Number of Elements per Chip

2

Automotive Standard

No

Infineon OptiMOS Series MOSFET, 25V Drain Source Voltage, 50A Maximum Continuous Drain Current - BSG0811NDATMA1


This MOSFET is a surface-mount N-channel transistor designed for high-current switching in compact power designs. It operates with an enhancement-mode N-channel topology and incorporates two elements on a single chip to serve dual-switch functions. The device is suitable for applications requiring a logic-level gate and low on-resistance within a low-voltage environment, and is supplied in a Power Block 5x6 package for dense board layouts.

Features and Benefits:


• Very low Rds(on) of 3mΩ enabling reduced conduction losses
• Maximum continuous drain current 50A for high-current demands
• Logic-level gate with Vgs limit of 4.5V for direct-drive compatibility
• Typical gate charge Qg 8.4nC supporting fast gate transitions
• Power dissipation rating 6.25W for effective thermal handling
• Operational range -55°C to 150°C for wide temperature tolerance

Applications


• Suitable for synchronous buck converters in power supplies
• Ideal for server VRM and high-current DC-DC modules
• Used with battery-management circuits in low-voltage systems
• Can be used for motor-driver stages in compact controllers
• Suitable for high-efficiency power distribution and load switching

What thermal limits should be considered during PCB design?


The device can operate up to150°C junction temperature and dissipates up to6.25W

thermal vias and adequate copper area are recommended to manage heat.

How does the dual-element construction affect layout choices?


Two elements per chip provide parallel current paths, reducing individual die stress and allowing tighter placement for symmetrical thermal distribution.

What gate-drive characteristics are required for efficient switching?


A gate drive compatible with a maximum gate-source rating of 4.5V and low charge requirement of 8.4nC reduces gate-driver losses and switching energy.

Are there material or regulatory standards relevant to selection?


The component conforms to JEDEC and RoHS and is manufactured on IEC61249-2-21 substrate, indicating standardised material and lead-free requirements.

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