Infineon BSZ Type N-Channel MOSFET, 212 A, 40 V N, 8-Pin PQFN BSZ024N04LS6ATMA1
- RS Stock No.:
- 241-9703
- Mfr. Part No.:
- BSZ024N04LS6ATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 2 units)*
SGD2.91
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SGD3.172
(inc. GST)
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In Stock
- 4,782 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD1.455 | SGD2.91 |
| 10 - 98 | SGD1.41 | SGD2.82 |
| 100 - 248 | SGD1.365 | SGD2.73 |
| 250 - 498 | SGD1.315 | SGD2.63 |
| 500 + | SGD1.27 | SGD2.54 |
*price indicative
- RS Stock No.:
- 241-9703
- Mfr. Part No.:
- BSZ024N04LS6ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 212A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PQFN | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 212A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PQFN | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 6 Power transistor is a N channel MOSFET which is optimized for synchronous application. It has Superior thermal resistance.
Halogen-free according to IEC61249-2-21
100% avalanche tested
Qualified according to JEDEC for target applications
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