Microchip MSC750SMA170B Type N-Channel MOSFET, 5 A, 1700 V TO-247
- RS Stock No.:
- 241-9277
- Mfr. Part No.:
- MSC750SMA170B
- Manufacturer:
- Microchip
This image is representative of the product range
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Subtotal (1 tube of 30 units)*
SGD208.95
(exc. GST)
SGD227.76
(inc. GST)
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In Stock
- 180 unit(s) ready to ship from another location
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 90 | SGD6.965 | SGD208.95 |
| 120 + | SGD6.392 | SGD191.76 |
*price indicative
- RS Stock No.:
- 241-9277
- Mfr. Part No.:
- MSC750SMA170B
- Manufacturer:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Package Type | TO-247 | |
| Series | MSC750SMA170B | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 2 V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Package Type TO-247 | ||
Series MSC750SMA170B | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 2 V | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high voltage applications.
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance
Stable operation at high junction temperature TJ(max) equal to 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant
Related links
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- Wolfspeed Type N-Channel MOSFET 1700 V Enhancement, 3-Pin TO-247 C2M0045170D
