Infineon ISZ230N10 Type N-Channel MOSFET, 31 A, 100 V, 8-Pin TSDSON ISZ230N10NM6ATMA1
- RS Stock No.:
- 235-4885
- Mfr. Part No.:
- ISZ230N10NM6ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
SGD9.98
(exc. GST)
SGD10.88
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 4,985 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD1.996 | SGD9.98 |
| 10 - 95 | SGD1.96 | SGD9.80 |
| 100 - 245 | SGD1.92 | SGD9.60 |
| 250 - 495 | SGD1.88 | SGD9.40 |
| 500 + | SGD1.844 | SGD9.22 |
*price indicative
- RS Stock No.:
- 235-4885
- Mfr. Part No.:
- ISZ230N10NM6ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TSDSON | |
| Series | ISZ230N10 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.04mΩ | |
| Maximum Power Dissipation Pd | 100W | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.4mm | |
| Width | 1.1mm | |
| Standards/Approvals | No | |
| Height | 3.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TSDSON | ||
Series ISZ230N10 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.04mΩ | ||
Maximum Power Dissipation Pd 100W | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 3.4mm | ||
Width 1.1mm | ||
Standards/Approvals No | ||
Height 3.4mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ 6 industrial power MOSFET 100V is designed for high switching frequency application such as telecom and server power supply, but also the Ideal choice for other applications such as solar, power tools and drones.
Lower and softer reverse recovery charge
Ideal for high switching frequency
High avalanche energy rating
RoHS compliant
Low conduction losses
Low switching losses
Environmentally friendly
Related links
- Infineon ISZ230N10 Type N-Channel MOSFET 100 V, 8-Pin TSDSON ISZ230N10NM6ATMA1
- Infineon ISZ080N10 Type N-Channel MOSFET 100 V, 8-Pin TSDSON ISZ080N10NM6ATMA1
- Infineon BSZ Type N-Channel MOSFET 250 V N, 8-Pin TSDSON
- Infineon BSZ Type N-Channel MOSFET 200 V N, 8-Pin TSDSON
- Infineon BSZ Type N-Channel MOSFET 200 V N, 8-Pin TSDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TSDSON BSZ067N06LS3GATMA1
- Infineon ISC Type N-Channel MOSFET 100 V, 8-Pin TDSON ISC230N10NM6ATMA1