Infineon IPP Type P-Channel MOSFET, 62 A, 100 V Enhancement, 3-Pin TO-220 IPP330P10NMAKSA1
- RS Stock No.:
- 235-4860
- Mfr. Part No.:
- IPP330P10NMAKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
SGD202.00
(exc. GST)
SGD220.00
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 400 unit(s) shipping from 14 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | SGD4.04 | SGD202.00 |
| 100 - 100 | SGD3.919 | SGD195.95 |
| 150 - 250 | SGD3.801 | SGD190.05 |
| 300 - 550 | SGD3.687 | SGD184.35 |
| 600 + | SGD3.576 | SGD178.80 |
*price indicative
- RS Stock No.:
- 235-4860
- Mfr. Part No.:
- IPP330P10NMAKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPP | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 300W | |
| Typical Gate Charge Qg @ Vgs | -189nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.36mm | |
| Width | 15.95mm | |
| Standards/Approvals | No | |
| Height | 4.57mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPP | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 300W | ||
Typical Gate Charge Qg @ Vgs -189nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 10.36mm | ||
Width 15.95mm | ||
Standards/Approvals No | ||
Height 4.57mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ P-Channel MOSFETs 100V in TO-220 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.
Ideal for high and low switching frequency
Avalanche ruggedness
Industry standard footprint surface mount package
Robust, reliable performance
Increased security of supply
Related links
- Infineon IPP Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IPP330P10NMAKSA1
- Infineon IPP Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon IPP Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IPP80P03P4L04AKSA2
- Infineon IPP Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon IPP Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-220 IPP120P04P4L03AKSA2
- Infineon IPP Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon IPP Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon IPP Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IPP80N08S406AKSA1