ROHM N-Channel MOSFET, 11 A, 650 V Enhancement, 3-Pin TO-252 R6511END3TL1

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Subtotal (1 pack of 5 units)*

SGD19.28

(exc. GST)

SGD21.02

(inc. GST)

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Units
Per unit
Per Pack*
5 - 45SGD3.856SGD19.28
50 - 95SGD3.472SGD17.36
100 - 245SGD3.124SGD15.62
250 - 995SGD2.81SGD14.05
1000 +SGD2.53SGD12.65

*price indicative

Packaging Options:
RS Stock No.:
235-2694
Mfr. Part No.:
R6511END3TL1
Manufacturer:
ROHM
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Brand

ROHM

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

400mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

32nC

Maximum Power Dissipation Pd

125W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

10.4mm

Standards/Approvals

No

Width

2.4mm

Length

6.4mm

Automotive Standard

No

The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

Low on-resistance

Fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

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