Infineon Isolated F4 Type N-Channel MOSFET, 25 A, 1200 V, 2-Pin AG-EASY2B F445MR12W1M1B76BPSA1

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Subtotal (1 tray of 24 units)*

SGD2,966.736

(exc. GST)

SGD3,233.736

(inc. GST)

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Units
Per unit
Per Tray*
24 - 24SGD123.614SGD2,966.74
48 - 48SGD119.905SGD2,877.72
72 - 120SGD115.11SGD2,762.64
144 - 264SGD109.354SGD2,624.50
288 +SGD102.793SGD2,467.03

*price indicative

RS Stock No.:
234-8967
Mfr. Part No.:
F445MR12W1M1B76BPSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

1200V

Series

F4

Package Type

AG-EASY2B

Pin Count

2

Maximum Drain Source Resistance Rds

45mΩ

Typical Gate Charge Qg @ Vgs

0.062μC

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

20mW

Maximum Gate Source Voltage Vgs

15 V

Forward Voltage Vf

5.65V

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Height

16.4mm

Length

62.8mm

Standards/Approvals

60749 and 60068, IEC 60747

Width

33.8 mm

Automotive Standard

No

The Infineon IGBT module has a 4 N-Channel (Half Bridge) FET Type works with 1200V Drain to Source Voltage and 75A continuous drain current.

Chassis mount

-40°C to 150°C operating temperature

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