Infineon Isolated F4 Type N-Channel MOSFET, 25 A, 1200 V, 2-Pin AG-EASY2B F445MR12W1M1B76BPSA1
- RS Stock No.:
- 234-8967
- Mfr. Part No.:
- F445MR12W1M1B76BPSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 tray of 24 units)*
SGD2,697.024
(exc. GST)
SGD2,939.76
(inc. GST)
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Temporarily out of stock
- Shipping from 30 June 2026
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Units | Per unit | Per Tray* |
|---|---|---|
| 24 - 24 | SGD112.376 | SGD2,697.02 |
| 48 - 48 | SGD109.005 | SGD2,616.12 |
| 72 - 120 | SGD104.645 | SGD2,511.48 |
| 144 - 264 | SGD99.413 | SGD2,385.91 |
| 288 + | SGD93.448 | SGD2,242.75 |
*price indicative
- RS Stock No.:
- 234-8967
- Mfr. Part No.:
- F445MR12W1M1B76BPSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | F4 | |
| Package Type | AG-EASY2B | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Forward Voltage Vf | 5.65V | |
| Typical Gate Charge Qg @ Vgs | 0.062μC | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Minimum Operating Temperature | -40°C | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Height | 16.4mm | |
| Standards/Approvals | 60749 and 60068, IEC 60747 | |
| Width | 33.8 mm | |
| Length | 62.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series F4 | ||
Package Type AG-EASY2B | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Forward Voltage Vf 5.65V | ||
Typical Gate Charge Qg @ Vgs 0.062μC | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Minimum Operating Temperature -40°C | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Height 16.4mm | ||
Standards/Approvals 60749 and 60068, IEC 60747 | ||
Width 33.8 mm | ||
Length 62.8mm | ||
Automotive Standard No | ||
The Infineon IGBT module has a 4 N-Channel (Half Bridge) FET Type works with 1200V Drain to Source Voltage and 75A continuous drain current.
Chassis mount
-40°C to 150°C operating temperature
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