Infineon DDB2U MOSFET AG-EASY1B-1 DDB2U40N12W1RFB11BPSA1
- RS Stock No.:
- 234-8952
- Mfr. Part No.:
- DDB2U40N12W1RFB11BPSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tray of 24 units)*
SGD2,744.016
(exc. GST)
SGD2,990.976
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 24 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 24 - 24 | SGD114.334 | SGD2,744.02 |
| 48 - 48 | SGD108.617 | SGD2,606.81 |
| 72 + | SGD103.186 | SGD2,476.46 |
*price indicative
- RS Stock No.:
- 234-8952
- Mfr. Part No.:
- DDB2U40N12W1RFB11BPSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Series | DDB2U | |
| Package Type | AG-EASY1B-1 | |
| Mount Type | Screw | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 1.85V | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC24720 and IEC16022, IEC8859-1 | |
| Height | 62.8mm | |
| Length | 42.5mm | |
| Automotive Standard | IEC 60747 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Series DDB2U | ||
Package Type AG-EASY1B-1 | ||
Mount Type Screw | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 1.85V | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC24720 and IEC16022, IEC8859-1 | ||
Height 62.8mm | ||
Length 42.5mm | ||
Automotive Standard IEC 60747 | ||
The Infineon EasyBRIDGE module with CoolSiC Schottky diode and PressFIT / NTC comes with integrated NTC temperature sensor and rugged mounting due to integrated mounting clamps.
20mW power dissipation
Al2O3 substrate with low thermal resistance
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