Infineon ISC Type N-Channel MOSFET, 288 A, 60 V Enhancement, 8-Pin TDSON ISZ034N06LM5ATMA1
- RS Stock No.:
- 233-4397
- Mfr. Part No.:
- ISZ034N06LM5ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD23.54
(exc. GST)
SGD25.66
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 3,400 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD2.354 | SGD23.54 |
| 20 - 90 | SGD2.306 | SGD23.06 |
| 100 - 240 | SGD2.259 | SGD22.59 |
| 250 - 490 | SGD2.214 | SGD22.14 |
| 500 + | SGD2.167 | SGD21.67 |
*price indicative
- RS Stock No.:
- 233-4397
- Mfr. Part No.:
- ISZ034N06LM5ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 288A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TDSON | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 83W | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Height | 3.4mm | |
| Width | 1.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 288A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TDSON | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 83W | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Height 3.4mm | ||
Width 1.1 mm | ||
Automotive Standard No | ||
The Infineon 60 V power MOSFET ISZ034N06LM5 comprises a perfect fit for optimized efficiency and power density solutions such as synchronous rectification in switched mode power supplies (SMPS), for telecom bricks and server applications, as well as portable chargers. The small footprint of only 3.3x3.3mm combined with outstanding electrical performance further contributes towards best-in-class power density and form factor improvement in the end application.
Very low voltage overshoot
Ultra low charges
Related links
- Infineon ISC Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon ISC Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON ISC011N06LM5ATMA1
- Infineon ISC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
- Infineon ISC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON ISC012N04LM6ATMA1
- Infineon ISC Type N-Channel OptiMOST Power-MOSFET 30 V Enhancement, 8-Pin PG-TDSON-8
- Infineon ISC Type N-Channel N-Channel Mosfet 120 V Enhancement, 8-Pin PG-TDSON-8 ISC078N12NM6ATMA1
- Infineon ISC Type N-Channel MOSFET 100 V Enhancement, 8-Pin PG-TDSON-8 ISC035N10NM5LF2ATMA1
- Infineon ISC Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TDSON-8 ISC110N12NM6ATMA1
