Infineon IPTG Type N-Channel MOSFET, 108 A, 200 V Enhancement, 8-Pin HSOG
- RS Stock No.:
- 233-4388
- Mfr. Part No.:
- IPTG111N20NM3FDATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 1800 units)*
SGD13,098.60
(exc. GST)
SGD14,277.60
(inc. GST)
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Temporarily out of stock
- Shipping from 12 May 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 1800 - 1800 | SGD7.277 | SGD13,098.60 |
| 3600 - 3600 | SGD6.913 | SGD12,443.40 |
| 5400 + | SGD6.567 | SGD11,820.60 |
*price indicative
- RS Stock No.:
- 233-4388
- Mfr. Part No.:
- IPTG111N20NM3FDATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 108A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | HSOG | |
| Series | IPTG | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 2.4mm | |
| Length | 10.1mm | |
| Width | 8.75 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 108A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type HSOG | ||
Series IPTG | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 2.4mm | ||
Length 10.1mm | ||
Width 8.75 mm | ||
Automotive Standard No | ||
The Infineon OptiMOS power MOSFET IPTG111N20NM3FD comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 3 - 200 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board.
High efficiency and lower EMI
High performance capability
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