Infineon IPTG Type N-Channel MOSFET, 454 A, 60 V Enhancement, 8-Pin HSOG

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Bulk discount available

Subtotal (1 reel of 1800 units)*

SGD8,598.60

(exc. GST)

SGD9,372.60

(inc. GST)

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Units
Per unit
Per Reel*
1800 - 1800SGD4.777SGD8,598.60
3600 - 3600SGD4.538SGD8,168.40
5400 +SGD4.311SGD7,759.80

*price indicative

RS Stock No.:
233-4381
Mfr. Part No.:
IPTG007N06NM5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

454A

Maximum Drain Source Voltage Vds

60V

Series

IPTG

Package Type

HSOG

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.75mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

216nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

375W

Maximum Operating Temperature

175°C

Width

8.75 mm

Height

2.4mm

Length

10.1mm

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS power MOSFET IPTG007N06NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 5 - 60 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board. This result in 2x higher thermal cycling on board

High efficiency and lower EMI

High performance capability

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