Infineon CoolSiC Type N-Channel MOSFET, 52 A, 1200 V Enhancement, 3-Pin TO-247 AIMW120R035M1HXKSA1
- RS Stock No.:
- 233-3487
- Mfr. Part No.:
- AIMW120R035M1HXKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
SGD46.72
(exc. GST)
SGD50.92
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 190 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | SGD46.72 |
| 10 - 49 | SGD45.77 |
| 50 - 99 | SGD44.89 |
| 100 - 149 | SGD43.99 |
| 150 + | SGD43.13 |
*price indicative
- RS Stock No.:
- 233-3487
- Mfr. Part No.:
- AIMW120R035M1HXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | CoolSiC | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 5.2V | |
| Maximum Power Dissipation Pd | 228W | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 16.3mm | |
| Standards/Approvals | No | |
| Height | 5.3mm | |
| Width | 21.5 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series CoolSiC | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 5.2V | ||
Maximum Power Dissipation Pd 228W | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Operating Temperature 175°C | ||
Length 16.3mm | ||
Standards/Approvals No | ||
Height 5.3mm | ||
Width 21.5 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolSiC MOSFETs for automotive family has been developed for current and future on board Charger and DC-DC applications in hybrid and electric vehicles. It has 52 A drain current.
Efficiency improvement
Enabling higher frequency
Increased power density
Cooling effort reduction
Related links
- Infineon CoolSiC Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247
- Infineon CoolSiC Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247
- Infineon CoolSiC Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247
- Infineon CoolSiC Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247 AIMW120R060M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247 AIMW120R080M1XKSA1
- Infineon CoolSiC Type N-Channel MOSFET 75 V, 3-Pin TO-247
- Infineon CoolSiC Type N-Channel MOSFET 75 V, 3-Pin TO-247 AIMW120R045M1XKSA1
- Infineon CoolSiC Type N-Channel MOSFET 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R020M1TXKSA1