Infineon OptiMOS 5 Type N-Channel MOSFET, 86 A, 60 V, 8-Pin PQFN ISZ0702NLSATMA1
- RS Stock No.:
- 232-6772
- Mfr. Part No.:
- ISZ0702NLSATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD11.36
(exc. GST)
SGD12.38
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 4,990 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD2.272 | SGD11.36 |
| 10 - 95 | SGD2.16 | SGD10.80 |
| 100 - 245 | SGD2.054 | SGD10.27 |
| 250 - 495 | SGD1.95 | SGD9.75 |
| 500 + | SGD1.848 | SGD9.24 |
*price indicative
- RS Stock No.:
- 232-6772
- Mfr. Part No.:
- ISZ0702NLSATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 86A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PQFN | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.6mΩ | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 65W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 1.1 mm | |
| Length | 3.4mm | |
| Height | 3.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 86A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PQFN | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.6mΩ | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 65W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 1.1 mm | ||
Length 3.4mm | ||
Height 3.4mm | ||
Automotive Standard No | ||
The Infineon's OptiMOS PD power MOSFET 60 V, are designed targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.
Logic level availability
Excellent thermal behaviour
100% avalanche tested
Related links
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V, 8-Pin PQFN
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V, 8-Pin PQFN
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V, 8-Pin PQFN ISZ0703NLSATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V, 8-Pin PQFN
- Infineon OptiMOS 5 Type N-Channel MOSFET 80 V, 8-Pin PQFN
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V, 8-Pin PQFN
- Infineon OptiMOS 5 Type N-Channel MOSFET 80 V, 8-Pin PQFN ISZ0602NLSATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V, 8-Pin PQFN ISZ0803NLSATMA1