Infineon CoolMOS Type N-Channel MOSFET, 106 A, 650 V, 3-Pin TO-247
- RS Stock No.:
- 232-3048
- Mfr. Part No.:
- IPW65R018CFD7XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 30 units)*
SGD657.24
(exc. GST)
SGD716.40
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | SGD21.908 | SGD657.24 |
| 60 - 60 | SGD21.251 | SGD637.53 |
| 90 - 150 | SGD20.401 | SGD612.03 |
| 180 - 330 | SGD19.38 | SGD581.40 |
| 360 + | SGD18.217 | SGD546.51 |
*price indicative
- RS Stock No.:
- 232-3048
- Mfr. Part No.:
- IPW65R018CFD7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 106A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Typical Gate Charge Qg @ Vgs | 234nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 21.1mm | |
| Width | 5.21 mm | |
| Length | 16.13mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 106A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Typical Gate Charge Qg @ Vgs 234nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 21.1mm | ||
Width 5.21 mm | ||
Length 16.13mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon CFD7 is super junction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and further more supports high power density solutions.
Ultrafast body diode and very low Qrr
650V breakdown voltage
Significantly reduced switching losses compared to competition
Related links
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- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-247
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- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R018CFD7XKSA1