onsemi SUPERFET III Type N-Channel MOSFET, 62 A, 650 V Enhancement, 4-Pin TO-247 NTH4LN040N65S3H

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SGD15.52

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SGD16.92

(inc. GST)

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1 - 9SGD15.52
10 - 49SGD14.04
50 - 99SGD13.38
100 - 249SGD11.62
250 +SGD11.58

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Packaging Options:
RS Stock No.:
230-9085
Mfr. Part No.:
NTH4LN040N65S3H
Manufacturer:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

62A

Maximum Drain Source Voltage Vds

650V

Series

SUPERFET III

Package Type

TO-247

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

379W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

132nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

2.4 mm

Standards/Approvals

No

Length

10.2mm

Height

13.28mm

Automotive Standard

No

The ON Semiconductor series SUPERFET III MOSFET is new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET FAST series helps minimize various power systems and improve system efficiency.

100% Avalanche Tested

RoHS Compliant

Typ. RDS(on) = 32 mΩ

Internal Gate Resistance: 0.7 Ω

Ultra Low Gate Charge (Typ. Qg = 132 nC)

700 V @ TJ = 150 oC

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