onsemi SUPERFET III Type N-Channel MOSFET, 62 A, 650 V Enhancement, 4-Pin TO-247
- RS Stock No.:
- 230-9084
- Mfr. Part No.:
- NTH4LN040N65S3H
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 450 units)*
SGD5,891.85
(exc. GST)
SGD6,421.95
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 20 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 450 - 450 | SGD13.093 | SGD5,891.85 |
| 900 - 1350 | SGD12.656 | SGD5,695.20 |
| 1800 + | SGD11.812 | SGD5,315.40 |
*price indicative
- RS Stock No.:
- 230-9084
- Mfr. Part No.:
- NTH4LN040N65S3H
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SUPERFET III | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 132nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 379W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.4 mm | |
| Standards/Approvals | No | |
| Length | 10.2mm | |
| Height | 13.28mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SUPERFET III | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 132nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 379W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 2.4 mm | ||
Standards/Approvals No | ||
Length 10.2mm | ||
Height 13.28mm | ||
Automotive Standard No | ||
The ON Semiconductor series SUPERFET III MOSFET is new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET FAST series helps minimize various power systems and improve system efficiency.
100% Avalanche Tested
RoHS Compliant
Typ. RDS(on) = 32 mΩ
Internal Gate Resistance: 0.7 Ω
Ultra Low Gate Charge (Typ. Qg = 132 nC)
700 V @ TJ = 150 oC
Related links
- onsemi SUPERFET III Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247 NTH4LN040N65S3H
- onsemi SUPERFET III Type N-Channel MOSFET 650 V Enhancement, 4-Pin H-PSOF
- onsemi SUPERFET III Type N-Channel MOSFET 650 V Enhancement, 4-Pin H-PSOF NTBL082N65S3HF
- onsemi SUPERFET III Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-263
- onsemi SUPERFET III Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220 FCP165N65S3
- onsemi SUPERFET III Type N-Channel MOSFET & Diode 650 V Enhancement, 3-Pin TO-263 FCB125N65S3
- onsemi SUPERFET III Type N-Channel MOSFET 650 V N, 3-Pin TO-220
- onsemi SUPERFET III Type N-Channel MOSFET 650 V N, 3-Pin TO-220