onsemi SUPERFET III N-Channel Power MOSFET, 19 A, 650 V Enhancement, 3-Pin TO-220 FCP165N65S3
- RS Stock No.:
- 178-4676
- Mfr. Part No.:
- FCP165N65S3
- Manufacturer:
- onsemi
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- RS Stock No.:
- 178-4676
- Mfr. Part No.:
- FCP165N65S3
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | SUPERFET III | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 165mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Power Dissipation Pd | 154W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 16.3mm | |
| Length | 10.67mm | |
| Width | 4.7mm | |
| Standards/Approvals | RoHS, Pb-Free, Halide Free | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series SUPERFET III | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 165mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Power Dissipation Pd 154W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 16.3mm | ||
Length 10.67mm | ||
Width 4.7mm | ||
Standards/Approvals RoHS, Pb-Free, Halide Free | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
700 V @ TJ = 150 °C
Ultra Low Gate Charge (Typ. Qg = 39 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF)
Internal Gate Resistance: 4.6 Ω
Optimized Capacitance
Typ. RDS(on) = 140 mΩ
Benefits:
Higher system reliability at low temperature operation
Lower switching loss
Lower switching loss
Lower peak Vds and lower Vgs oscillation
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Consumer
Industrial
End Products:
Notebook / Desktop computer
Game Console
Telecom / Server
LCD / LED TV
LED Lighting / Ballast
Adapter
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