onsemi SUPERFET III Type N-Channel MOSFET, 10 A, 650 V N, 3-Pin TO-252 NTD360N65S3H

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Subtotal (1 pack of 5 units)*

SGD17.85

(exc. GST)

SGD19.45

(inc. GST)

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  • 14,855 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 5SGD3.57SGD17.85
10 - 95SGD3.462SGD17.31
100 - 245SGD3.35SGD16.75
250 - 495SGD3.28SGD16.40
500 +SGD3.212SGD16.06

*price indicative

Packaging Options:
RS Stock No.:
229-6453
Mfr. Part No.:
NTD360N65S3H
Manufacturer:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Series

SUPERFET III

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

N

Typical Gate Charge Qg @ Vgs

17.5nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

83W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

6.73mm

Standards/Approvals

No

Height

6.22mm

Automotive Standard

No

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 10 A, 360 mΩ, DPAK


SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III FAST MOSFET series helps minimize various power systems and improve system efficiency.

Features


• 700 V @ TJ = 150°C

• Ultra Low Gate Charge (Typ. Qg = 17.5 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 180 pF)

• Fast switching performance with robust body diode

• 100% Avalanche Tested

• RoHS Compliant

• Typ. RDS(on) = 296 m

• Internal Gate Resistance: 0.9

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