onsemi SUPERFET III Type N-Channel MOSFET, 10 A, 650 V N, 3-Pin TO-252
- RS Stock No.:
- 229-6452
- Mfr. Part No.:
- NTD360N65S3H
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2500 units)*
SGD4,275.00
(exc. GST)
SGD4,650.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 12,500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 5000 | SGD1.71 | SGD4,275.00 |
| 7500 - 10000 | SGD1.65 | SGD4,125.00 |
| 12500 + | SGD1.573 | SGD3,932.50 |
*price indicative
- RS Stock No.:
- 229-6452
- Mfr. Part No.:
- NTD360N65S3H
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SUPERFET III | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 17.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 2.39 mm | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SUPERFET III | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 17.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 2.39 mm | ||
Height 6.22mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 10 A, 360 mΩ, DPAK
SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III FAST MOSFET series helps minimize various power systems and improve system efficiency.
Features
• 700 V @ TJ = 150°C
• Ultra Low Gate Charge (Typ. Qg = 17.5 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 180 pF)
• Fast switching performance with robust body diode
• 100% Avalanche Tested
• RoHS Compliant
• Typ. RDS(on) = 296 m
• Internal Gate Resistance: 0.9
Related links
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