Vishay E N-Channel MOSFET, 47 A, 600 V, 3-Pin TO-263 SIHB053N60E-GE3
- RS Stock No.:
- 225-9910
- Mfr. Part No.:
- SIHB053N60E-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 225-9910
- Mfr. Part No.:
- SIHB053N60E-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 54mΩ | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 92nC | |
| Maximum Power Dissipation Pd | 278W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 9.65mm | |
| Height | 15.88mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 54mΩ | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 92nC | ||
Maximum Power Dissipation Pd 278W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 9.65mm | ||
Height 15.88mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Related links
- Vishay E N-Channel MOSFET 600 V, 3-Pin TO-263 SIHB053N60E-GE3
- Vishay E N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 SiHG47N60E-GE3
- Vishay E N-Channel Power MOSFET 700 V Enhancement, 3-Pin TO-247AD SQW44N65EF-GE3
- Vishay Single E N-Channel MOSFET 650 V TO-247AC SIHG47N65E-GE3
- Vishay E N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB30N60E-GE3
- Vishay E N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB11N80AE-GE3
- Vishay E N-Channel MOSFET 800 V, 3-Pin TO-263 SIHB5N80AE-GE3
- Vishay E N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-GE3