Infineon IPDQ60R010S7A N-Channel MOSFET, 50 A, 600 V N, 22-Pin HDSOP IPDQ60R010S7AXTMA1
- RS Stock No.:
- 225-0577
- Mfr. Part No.:
- IPDQ60R010S7AXTMA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 750 units)*
SGD16,927.50
(exc. GST)
SGD18,450.00
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 22 March 2027
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Units | Per unit | Per Reel* |
|---|---|---|
| 750 - 1500 | SGD22.57 | SGD16,927.50 |
| 2250 - 3000 | SGD21.724 | SGD16,293.00 |
| 3750 + | SGD20.366 | SGD15,274.50 |
*price indicative
- RS Stock No.:
- 225-0577
- Mfr. Part No.:
- IPDQ60R010S7AXTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPDQ60R010S7A | |
| Package Type | HDSOP | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 318nC | |
| Forward Voltage Vf | 820mV | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 694W | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.1mm | |
| Width | 2.35mm | |
| Standards/Approvals | No | |
| Height | 21.06mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPDQ60R010S7A | ||
Package Type HDSOP | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 318nC | ||
Forward Voltage Vf 820mV | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 694W | ||
Maximum Operating Temperature 150°C | ||
Length 15.1mm | ||
Width 2.35mm | ||
Standards/Approvals No | ||
Height 21.06mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon IPDQ60R010S7A is a high voltage power MOSFET,designed as static switch according to the super junction (SJ) principle. The mosfet combines the experience of the leading SJ MOSFET supplier with high class innovation enabling low RDS (on) in QDPAK package. The S7A series is optimised for low frequency switching and high current. application like circuit breakers.
Minimizes conduction losses
Increases energy efficiency
More compact and easier designs
Lower TCO cost or BOM cost
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