Infineon IPDQ60R010S7A Type N-Channel MOSFET, 50 A, 600 V N, 22-Pin HDSOP
- RS Stock No.:
- 225-0577
- Mfr. Part No.:
- IPDQ60R010S7AXTMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionSubtotal (1 reel of 750 units)*
SGD16,260.00
(exc. GST)
SGD17,722.50
(inc. GST)
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- Shipping from 11 November 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 750 - 1500 | SGD21.68 | SGD16,260.00 |
| 2250 - 3000 | SGD20.867 | SGD15,650.25 |
| 3750 + | SGD19.562 | SGD14,671.50 |
*price indicative
- RS Stock No.:
- 225-0577
- Mfr. Part No.:
- IPDQ60R010S7AXTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | HDSOP | |
| Series | IPDQ60R010S7A | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 694W | |
| Typical Gate Charge Qg @ Vgs | 318nC | |
| Forward Voltage Vf | 0.82V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.1mm | |
| Height | 21.06mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type HDSOP | ||
Series IPDQ60R010S7A | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 694W | ||
Typical Gate Charge Qg @ Vgs 318nC | ||
Forward Voltage Vf 0.82V | ||
Maximum Operating Temperature 150°C | ||
Length 15.1mm | ||
Height 21.06mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon IPDQ60R010S7A is a high voltage power MOSFET,designed as static switch according to the super junction (SJ) principle. The mosfet combines the experience of the leading SJ MOSFET supplier with high class innovation enabling low RDS (on) in QDPAK package. The S7A series is optimised for low frequency switching and high current. application like circuit breakers.
Minimizes conduction losses
Increases energy efficiency
More compact and easier designs
Lower TCO cost or BOM cost
Related links
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