Infineon BSS123I Type N-Channel MOSFET, 190 mA, 100 V Depletion, 4-Pin SOT-223 BSS123IXTSA1

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Subtotal (1 pack of 100 units)*

SGD8.40

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SGD9.20

(inc. GST)

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Units
Per unit
Per Pack*
100 - 100SGD0.084SGD8.40
200 - 200SGD0.082SGD8.20
300 - 300SGD0.08SGD8.00
400 - 1900SGD0.079SGD7.90
2000 +SGD0.065SGD6.50

*price indicative

Packaging Options:
RS Stock No.:
225-0557
Mfr. Part No.:
BSS123IXTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

190mA

Maximum Drain Source Voltage Vds

100V

Series

BSS123I

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Depletion

Typical Gate Charge Qg @ Vgs

0.63nC

Maximum Power Dissipation Pd

0.5W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Length

6.7mm

Standards/Approvals

No

Height

1.8mm

Width

3.7 mm

Distrelec Product Id

304-39-400

Automotive Standard

No

The Infineon BSS123I is the small signal, small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. This MOSFET have enhancement and depletion-mode options.

PCB-space and cost savings

Gate drive flexibility

Reduced design complexity

Environmentally friendly

High overall efficiency

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