Infineon BSS123I N-Channel MOSFET, 190 mA, 100 V Depletion, 4-Pin SOT-223 BSS123IXTSA1
- RS Stock No.:
- 225-0557
- Distrelec Article No.:
- 304-39-400
- Mfr. Part No.:
- BSS123IXTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (1 pack of 100 units)*
SGD11.40
(exc. GST)
SGD12.40
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
- Plus 200 unit(s) shipping from 05 October 2026
- Plus 3,200 unit(s) shipping from 09 October 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 100 | SGD0.114 | SGD11.40 |
| 200 - 200 | SGD0.111 | SGD11.10 |
| 300 - 300 | SGD0.109 | SGD10.90 |
| 400 - 1900 | SGD0.107 | SGD10.70 |
| 2000 + | SGD0.088 | SGD8.80 |
*price indicative
- RS Stock No.:
- 225-0557
- Distrelec Article No.:
- 304-39-400
- Mfr. Part No.:
- BSS123IXTSA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 190mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-223 | |
| Series | BSS123I | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 0.63nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.8mm | |
| Length | 6.7mm | |
| Width | 3.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 190mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-223 | ||
Series BSS123I | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 0.63nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Height 1.8mm | ||
Length 6.7mm | ||
Width 3.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon BSS123I Series MOSFET, 100V Maximum Drain Source Voltage, 190mA Maximum Continuous Drain Current - BSS123IXTSA1
Features and Benefits:
• 10 Ω maximum RDS(on) provides controlled on-state conduction
• 190 mA continuous drain current supports low-current loads
• 0.5 W power dissipation limits thermal stress in constrained layouts
• 0.63 nC typical gate charge enables modest switching energy demands
• ±20 V gate tolerance allows broad gate-drive flexibility
Applications
• Suitable for surface-mount power management on Compact boards
• Ideal for analogue signal attenuation or pull-down functions
• Can be used for level-shifting in mixed-voltage systems
• Used with driver stages needing depletion-mode characteristics
What ambient temperature range can it operate in?
What package should designers plan for when laying out the board?
How does its gate charge affect switching performance?
What limits the maximum continuous current in applications?
Is this intended as an automotive-grade component?
Related links
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