Infineon OptiMOS N-Channel MOSFET, 100 A, 55 V Enhancement, 3-Pin TO-263 IPB100N06S2L05ATMA2
- RS Stock No.:
- 223-8513
- Mfr. Part No.:
- IPB100N06S2L05ATMA2
- Manufacturer:
- Infineon
This image is representative of the product range
Add 10 more to save SGD5.54
View bulk pricing optionsSubtotal (1 pack of 5 units)*
SGD33.77
(exc. GST)
SGD36.81
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
- Plus 2,925 unit(s) shipping from 16 November 2026
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 5 - 5 | SGD6.754 | SGD33.77 | - |
| 10 - 95 | SGD6.20 | SGD31.00 | SGD5.54 |
| 100 - 245 | SGD5.714 | SGD28.57 | SGD104.00 |
| 250 - 495 | SGD5.318 | SGD26.59 | SGD359.00 |
| 500 + | SGD5.166 | SGD25.83 | SGD794.00 |
*price indicative
- RS Stock No.:
- 223-8513
- Mfr. Part No.:
- IPB100N06S2L05ATMA2
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-263 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Forward Voltage Vf | 900mV | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-263 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Forward Voltage Vf 900mV | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Related links
- Infineon OptiMOS N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IPB100N06S2L05ATMA2
- Infineon OptiMOS N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IPB80N06S2H5ATMA2
- Infineon OptiMOS N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IPB80N06S2L09ATMA2
- Infineon OptiMOS N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 IPD26N06S2L35ATMA2
- Infineon OptiMOS N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263 IPB100N04S204ATMA4
- Infineon OptiMOS N-Channel MOSFET 55 V Enhancement, 3-Pin SOT-223
