Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V, 3-Pin TO-252

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Subtotal (1 reel of 3000 units)*

SGD6,381.00

(exc. GST)

SGD6,954.00

(inc. GST)

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Per Reel*
3000 +SGD2.127SGD6,381.00

*price indicative

RS Stock No.:
223-8456
Mfr. Part No.:
AUIRFR5305TRL
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

65mΩ

Typical Gate Charge Qg @ Vgs

63nC

Maximum Power Dissipation Pd

110W

Forward Voltage Vf

-1.3V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon automotive qualified single P-channel HEXFET power MOSFET in a D2-pak package. The cellular design of power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. It is used in automotive and wide variety of applications because of fast switching speed and ruggedized device.

Advanced planar technology

Dynamic dV/dT rating

175°C operating temperature

Fast switching

Lead free

RoHS compliant

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