Infineon IPT60R N-Channel MOSFET, 29 A, 600 V Enhancement, 8-Pin HSOF IPT60R080G7XTMA1

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Subtotal (1 pack of 2 units)*

SGD18.74

(exc. GST)

SGD20.42

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8SGD9.37SGD18.74
10 - 98SGD8.605SGD17.21
100 - 248SGD7.935SGD15.87
250 - 498SGD7.38SGD14.76
500 +SGD7.175SGD14.35

*price indicative

Packaging Options:
RS Stock No.:
222-4940
Mfr. Part No.:
IPT60R080G7XTMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

600V

Package Type

HSOF

Series

IPT60R

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

800mV

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

42nC

Maximum Power Dissipation Pd

167W

Maximum Operating Temperature

150°C

Height

2.4mm

Standards/Approvals

No

Width

10.58mm

Length

10.1mm

Automotive Standard

No

The Infineon CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.

Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G

Enables best-in-class R DS(on) in smallest footprint

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