Infineon IPT60R Type N-Channel MOSFET, 29 A, 600 V Enhancement, 8-Pin HSOF

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Bulk discount available

Subtotal (1 reel of 2000 units)*

SGD9,032.00

(exc. GST)

SGD9,844.00

(inc. GST)

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Units
Per unit
Per Reel*
2000 - 2000SGD4.516SGD9,032.00
4000 - 4000SGD4.342SGD8,684.00
6000 +SGD4.287SGD8,574.00

*price indicative

RS Stock No.:
222-4939
Mfr. Part No.:
IPT60R080G7XTMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

600V

Package Type

HSOF

Series

IPT60R

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

42nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

167W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.8V

Maximum Operating Temperature

150°C

Width

10.58 mm

Standards/Approvals

No

Length

10.1mm

Height

2.4mm

Automotive Standard

No

The Infineon CoolMOS™ C7 Gold superjunction MOSFET series (G7) brings together the benefits of the improved 600V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC.

Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G

Enables best-in-class R DS(on) in smallest footprint

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