Infineon IPS70R N-Channel MOSFET, 6 A, 700 V Enhancement, 3-Pin TO-251 IPS70R900P7SAKMA1
- RS Stock No.:
- 222-4935
- Mfr. Part No.:
- IPS70R900P7SAKMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 75 units)*
SGD61.43
(exc. GST)
SGD66.98
(inc. GST)
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In Stock
- Plus 675 unit(s) shipping from 26 October 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 150 | SGD0.819 | SGD61.43 |
| 225 - 300 | SGD0.806 | SGD60.45 |
| 375 - 675 | SGD0.785 | SGD58.88 |
| 750 - 1425 | SGD0.744 | SGD55.80 |
| 1500 + | SGD0.665 | SGD49.88 |
*price indicative
- RS Stock No.:
- 222-4935
- Mfr. Part No.:
- IPS70R900P7SAKMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-251 | |
| Series | IPS70R | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.8nC | |
| Maximum Power Dissipation Pd | 30.5W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Forward Voltage Vf | 900mV | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.4mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 6.22mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-251 | ||
Series IPS70R | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.8nC | ||
Maximum Power Dissipation Pd 30.5W | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 16V | ||
Forward Voltage Vf 900mV | ||
Maximum Operating Temperature 150°C | ||
Width 2.4mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 6.22mm | ||
Automotive Standard No | ||
The Infineon developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:
Allowing high speed switching
Integrated protection Zener diode
Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio
Related links
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- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R900P7SAKMA1
- Infineon CoolMOS P7 N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
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