Infineon IPP60R Type N-Channel MOSFET, 23 A, 600 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 222-4923
- Mfr. Part No.:
- IPP60R022S7XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionSubtotal (1 tube of 50 units)*
SGD442.35
(exc. GST)
SGD482.15
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 350 unit(s) ready to ship from another location
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 100 | SGD8.847 | SGD442.35 |
| 150 - 200 | SGD8.707 | SGD435.35 |
| 250 - 450 | SGD8.478 | SGD423.90 |
| 500 - 950 | SGD8.032 | SGD401.60 |
| 1000 + | SGD7.187 | SGD359.35 |
*price indicative
- RS Stock No.:
- 222-4923
- Mfr. Part No.:
- IPP60R022S7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | IPP60R | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Power Dissipation Pd | 390W | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.45mm | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series IPP60R | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Power Dissipation Pd 390W | ||
Maximum Operating Temperature 150°C | ||
Height 9.45mm | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon design optimized for low conduction losses, the 600V CoolMOS™ S7 Superjunction MOSFET (IPP60R022S7) in TO-220 features the best RDS(on) x price for low switching frequency applications, such as active bridge rectifiers, inverter stages, in-rush relays, PLCs, HV DC lines, power solid state relays and solid state circuit breakers. The 600V CoolMOS™ S7 SJ MOSFET achieves higher energy efficiency and reduces BOM expenses.
Minimize conduction losses
Increase energy efficiency
More compact and easier designs
Eliminate or reduce heat sink in solid state design
Lower total cost of ownership (TCO) or bill-of-material (BOM) cost
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