Infineon IPB65R Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

SGD1,477.00

(exc. GST)

SGD1,610.00

(inc. GST)

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Temporarily out of stock
  • Shipping from 04 August 2026
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Units
Per unit
Per Reel*
1000 - 1000SGD1.477SGD1,477.00
2000 - 2000SGD1.42SGD1,420.00
3000 +SGD1.402SGD1,402.00

*price indicative

RS Stock No.:
222-4894
Mfr. Part No.:
IPB60R180P7ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

IPB65R

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

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