Infineon CoolMOS Type N-Channel MOSFET, 1.5 A, 800 V Enhancement, 3-Pin TO-251
- RS Stock No.:
- 222-4716
- Mfr. Part No.:
- IPU80R4K5P7AKMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 75 units)*
SGD59.775
(exc. GST)
SGD65.175
(inc. GST)
Add 225 units to get free delivery
Temporarily out of stock
- Shipping from 25 May 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 150 | SGD0.797 | SGD59.78 |
| 225 - 300 | SGD0.784 | SGD58.80 |
| 375 - 675 | SGD0.764 | SGD57.30 |
| 750 - 1425 | SGD0.724 | SGD54.30 |
| 1500 + | SGD0.647 | SGD48.53 |
*price indicative
- RS Stock No.:
- 222-4716
- Mfr. Part No.:
- IPU80R4K5P7AKMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-251 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 13W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-251 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 13W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.
Pb-free lead plating; RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23
Related links
- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-251 IPU80R4K5P7AKMA1
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- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223 IPN80R4K5P7ATMA1
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- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251