Infineon CoolMOS Type N-Channel MOSFET, 90 A, 80 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

SGD3,372.50

(exc. GST)

SGD3,675.00

(inc. GST)

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Units
Per unit
Per Reel*
2500 - 2500SGD1.349SGD3,372.50
5000 - 5000SGD1.297SGD3,242.50
7500 +SGD1.281SGD3,202.50

*price indicative

RS Stock No.:
222-4678
Mfr. Part No.:
IPD90N08S405ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

80V

Series

CoolMOS

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5.3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

52nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

144W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

6.22 mm

Length

6.5mm

Height

2.3mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

OptiMOS™ - power MOSFET for automotive applications

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