Infineon OptiMOS N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S4L08ATMA2
- RS Stock No.:
- 222-4666
- Mfr. Part No.:
- IPD50N06S4L08ATMA2
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (15 units, in packs of 15)*
SGD25.65
(exc. GST)
SGD27.90
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
- 11,610 unit(s) shipping from 12 October 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | SGD1.71 | SGD25.65 |
| 30 - 75 | SGD1.568 | SGD23.52 |
| 90 - 225 | SGD1.448 | SGD21.72 |
| 240 - 465 | SGD1.343 | SGD20.15 |
| 480 + | SGD1.309 | SGD19.64 |
*price indicative
- RS Stock No.:
- 222-4666
- Mfr. Part No.:
- IPD50N06S4L08ATMA2
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Maximum Power Dissipation Pd | 71W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 6.22mm | |
| Length | 6.5mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Maximum Power Dissipation Pd 71W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 6.22mm | ||
Length 6.5mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET, 60V Maximum Drain Source Voltage, 50A Maximum Continuous Drain Current - IPD50N06S4L08ATMA2
Features and Benefits:
• High continuous current capability of 50A for heavy-load switching
• 60V drain-source rating for mid-voltage system compatibility
• 71W maximum power dissipation for elevated thermal handling
• Typical gate charge 49nC enabling predictable switching behaviour
• Gate-source voltage tolerance up to 16V for flexible drive levels
Applications
• Ideal for DC-DC converters in transportation systems
• Used for motor drive stages requiring high current
• Can be used for battery management and power steering
• Used in high-power switching on surface-mounted assemblies
What temperature range can it operate within?
What package and mounting style does it use?
How many electrical connections does it provide?
What is the forward voltage characteristic under conduction?
What automotive qualification level does it meet?
Related links
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- Infineon OptiMOS N-Channel MOSFET & Diode 60 V Enhancement, 3-Pin TO-252
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- Infineon OptiMOS N-Channel MOSFET & Diode 60 V Enhancement, 3-Pin TO-252 IPD90N06S407ATMA2
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