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onsemi NTHL067N N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-247 NTHL067N65S3H

RS Stock No.:: 221-6714
Mfr. Part No.:: NTHL067N65S3H
Manufacturer:: onsemi

onsemi NTHL067N N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-247 NTHL067N65S3H

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Subtotal (1 pack of 2 units)*

SGD27.72

(exc. GST)

SGD30.22

(inc. GST)

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Units	Per unit	Per Pack*
2 - 8	SGD13.86	SGD27.72
10 - 98	SGD12.705	SGD25.41
100 - 248	SGD11.735	SGD23.47
250 - 498	SGD10.895	SGD21.79
500 +	SGD10.60	SGD21.20

*price indicative

RS Stock No.:: 221-6714
Mfr. Part No.:: NTHL067N65S3H
Manufacturer:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	650V
	Series	NTHL067N
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	67mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	266W
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	175°C
	Width	4.8mm
	Standards/Approvals	No
	Height	20.82mm
	Length	15.87mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 650V
	Series NTHL067N
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 67mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 266W
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 175°C
	Width 4.8mm
	Standards/Approvals No
	Height 20.82mm
	Length 15.87mm
	Automotive Standard No

Datasheet - NTHL067N65S3H

The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.

Ultra low gate charge

low effective output capacitance 691 pF

100% avalanche tested

onsemi NTHL067N N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-247 NTHL067N65S3H

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