onsemi Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-263 NVB082N65S3F
- RS Stock No.:
- 186-1481
- Mfr. Part No.:
- NVB082N65S3F
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD15.30
(exc. GST)
SGD16.68
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 756 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | SGD7.65 | SGD15.30 |
| 20 - 198 | SGD7.49 | SGD14.98 |
| 200 - 498 | SGD7.26 | SGD14.52 |
| 500 - 998 | SGD7.04 | SGD14.08 |
| 1000 + | SGD6.83 | SGD13.66 |
*price indicative
- RS Stock No.:
- 186-1481
- Mfr. Part No.:
- NVB082N65S3F
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 313W | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.58mm | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 313W | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Maximum Operating Temperature 150°C | ||
Height 4.58mm | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Automotive Standard AEC-Q101 | ||
Non Compliant
SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
700 V @ TJ = 150°C
Typ. RDS(on) = 64 m
Ultra Low Gate Charge (Typ. Qg = 81 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
These Devices are Pb−Free
Typical Applications
Automotive On Board Charger
Automotive DC/DC Converter for HEV
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