Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 170 A, 100 V Enhancement, 3-Pin TO-263 IPB033N10N5LFATMA1

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Subtotal (1 pack of 2 units)*

SGD12.83

(exc. GST)

SGD13.984

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8SGD6.415SGD12.83
10 - 98SGD6.275SGD12.55
100 - 248SGD6.085SGD12.17
250 - 498SGD5.905SGD11.81
500 +SGD5.725SGD11.45

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Packaging Options:
RS Stock No.:
220-7380
Mfr. Part No.:
IPB033N10N5LFATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

170A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS 5

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.3mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

Combination of low R DS(on) and wide safe operating area (SOA)

High max. pulse current

High continuous pulse current

Rugged linear mode operation

Low conduction losses

Higher in-rush current enabled for faster start-up and shorter down time

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