Infineon HEXFET Type N-Channel MOSFET & Diode, 62 A, 55 V Enhancement, 3-Pin TO-252 AUIRFR48ZTRL
- RS Stock No.:
- 220-7347
- Mfr. Part No.:
- AUIRFR48ZTRL
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD19.81
(exc. GST)
SGD21.595
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 30 March 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD3.962 | SGD19.81 |
| 10 - 95 | SGD3.882 | SGD19.41 |
| 100 - 245 | SGD3.802 | SGD19.01 |
| 250 - 495 | SGD3.726 | SGD18.63 |
| 500 + | SGD3.652 | SGD18.26 |
*price indicative
- RS Stock No.:
- 220-7347
- Mfr. Part No.:
- AUIRFR48ZTRL
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Power Dissipation Pd | 91W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.22mm | |
| Standards/Approvals | No | |
| Width | 6.73 mm | |
| Height | 2.39mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Power Dissipation Pd 91W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.22mm | ||
Standards/Approvals No | ||
Width 6.73 mm | ||
Height 2.39mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon AUIRFR48ZTRL specifically designed for automotive applications, this HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. It is use in Automotive applications and a wide variety of other applications.
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
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